Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

@article{Gong2016WhyIF,
  title={Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective},
  author={Nanbo Gong and Tso-Ping Ma},
  journal={IEEE Electron Device Letters},
  year={2016},
  volume={37},
  pages={1123-1126}
}
The limited retention time for single-transistor memory cell based on ferroelectric-gated field-effect-transistor (FeFET) has prevented the commercialization of its nonvolatile memory (NVM) option using the commercially available ferroelectric materials, such as strontium bismuth tantalite (SBT) or lead zirconium titanate (PZT), as the gate dielectric. However, the recent advent of the HfO2-based ferroelectric has demonstrated the strong possibility of meeting the NVM requirement of 10-year… CONTINUE READING
7 Citations
23 References
Similar Papers

References

Publications referenced by this paper.
Showing 1-10 of 23 references

Integration challenges of ferroelectric hafnium oxide based embedded memory

  • J. Müllerr, P. Polakowski, +15 authors S. Kolodinskid
  • ECS Trans., vol. 69, no. 3, pp. 85–95, 2015, doi…
  • 2015
Highly Influential
5 Excerpts

Retention mechanism study of the ferroelectric field effect transistor

  • X. Pan, T. P. Ma
  • Appl. Phys. Lett., vol. 99, no. 1, p. 01305, 2011…
  • 2011
Highly Influential
7 Excerpts

Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects

  • J. Müller, P. Polakowski, S. Müller, T. Mikolajick
  • ECS J. Solid State Sci. Technol., vol. 4, no. 5…
  • 2015
3 Excerpts

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

  • U. Schroeder, E. Yurchuk, +7 authors T. Mikolajick
  • Jpn. J. Appl. Phys., vol. 53, no. 8S1, p. 08LE02…
  • 2014
1 Excerpt

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

  • E. Yurchuk, S. Müller, +11 authors M. Trentzsch
  • Proc. IEEE IRPS, Jun. 2014, pp. 2E.5.1–2E.5.5…
  • 2014
1 Excerpt

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

  • E. Yurchuka, J. Müller, +5 authors T. Mikolajick
  • Thin Solid Films, vol. 533, pp. 88–92, Apr. 2013…
  • 2013
1 Excerpt

Ferroelectric-gated field-effect transistor for DRAM applications

  • X. Pan
  • Ph.D. dissertation, Dept. Electr. Eng., Yale Univ…
  • 2012
2 Excerpts

Similar Papers

Loading similar papers…