Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

  title={Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective},
  author={Nanbo Gong and Tso-Ping Ma},
  journal={IEEE Electron Device Letters},
The limited retention time for single-transistor memory cell based on ferroelectric-gated field-effect-transistor (FeFET) has prevented the commercialization of its nonvolatile memory (NVM) option using the commercially available ferroelectric materials, such as strontium bismuth tantalite (SBT) or lead zirconium titanate (PZT), as the gate dielectric. However, the recent advent of the HfO2-based ferroelectric has demonstrated the strong possibility of meeting the NVM requirement of 10-year… CONTINUE READING
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