White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

@article{Sheu2002WhitelightEF,
  title={White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer},
  author={J. K. Sheu and C. J. Pan and G. C. Chi and C. H. Kuo and L. W. Wu and C. H. Chen and S. J. Chang and Y. K. Su},
  journal={IEEE Photonics Technology Letters},
  year={2002},
  volume={14},
  pages={450-452}
}
Si and Zn codoped In/sub x/Ga/sub 1-x/N-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm/spl sim/560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of… CONTINUE READING
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