Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

@article{Zhang2012WettingLE,
  title={Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots},
  author={Hongyi Zhang and Yonghai Chen and Guanyu Zhou and Chenguang Tang and Zhanguo Wang},
  journal={Nanoscale Research Letters},
  year={2012},
  volume={7},
  pages={600 - 600}
}
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation… 

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