Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.

@article{Flp2016WetEM,
  title={Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.},
  author={Gergő F{\"u}l{\"o}p and Samuel d'Hollosy and Lukas Hofstetter and Andreas Baumgartner and Jesper Nyg{\aa}rd and Christian Sch{\"o}nenberger and Szabolcs Csonka},
  journal={Nanotechnology},
  year={2016},
  volume={27 19},
  pages={
          195303
        }
}
Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch… 
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References

SHOWING 1-10 OF 42 REFERENCES
Minimization of the contact resistance between InAs nanowires and metallic contacts.
TLDR
Different processes for optimizing the formation of Ohmic contacts to InAs nanowires are investigated and an upper bound of 1.4 × 10(-7) Ω cm(2) for the contact resistivity of metallic contacts on nanowire treated by the argon milling process is extracted.
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
TLDR
Charge pumping in InAs NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, for example, Majorana modes by single electron spectroscopy and correlation experiments.
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V
Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.
TLDR
The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.
Epitaxy of semiconductor-superconductor nanowires.
TLDR
The grain growth kinetics of the metal phase is formulated in general terms of continuum parameters and bicrystal symmetries and seems to solve the soft-gap problem in superconducting hybrid structures.
Self-aligned charge read-out for InAs nanowire quantum dots.
TLDR
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire and charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly.
Epitaxial aluminum contacts to InAs nanowires
We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties
Method for suppression of stacking faults in Wurtzite III-V nanowires.
TLDR
The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter adopt purely wurtzite structure and are observed to thicken once the axial growth exceeds a certain length.
Sulfur passivation for ohmic contact formation to InAs nanowires
We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivation of the contact areas in an ammonium polysulfide, (NH4)2Sx, water solution. The nanowires were
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