Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.

  title={Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.},
  author={Gergő F{\"u}l{\"o}p and Samuel d'Hollosy and Lukas Hofstetter and Andreas Baumgartner and Jesper Nyg{\aa}rd and Christian Sch{\"o}nenberger and Szabolcs Csonka},
  volume={27 19},
Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch… 
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