Wet cleaning process for high-yield via-last TSV formation

Abstract

The backside via-last through silicon via (TSV) process is a simple and cost-effective approach for three-dimensional integration. However, it has two problems: (1) the notching near the bottom corners of TSVs and (2) the reaction product generated by the etchback step. To overcome these problems and increase TSV yield, we previously proposed a via-last TSV… (More)
DOI: 10.1109/3DIC.2016.7970026

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