Wavelength‐Controlled Photocurrent Polarity Switching in BP‐MoS2 Heterostructure

  title={Wavelength‐Controlled Photocurrent Polarity Switching in BP‐MoS2 Heterostructure},
  author={Himani Jawa and Abin Varghese and Sayantani Ghosh and Srilagna Sahoo and Yuefeng Yin and Nikhil V. Medhekar and Saurabh Lodha},
  journal={Advanced Functional Materials},
Layered 2D van der Waals semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi‐level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a key requirement for these applications. This report demonstrates visible‐to‐near infrared wavelength‐driven NPC and PPC… 
3 Citations
Highly Tunable, Broadband, and Negative Photoresponse MoS2 Photodetector Driven by Ion-Gel Gate Dielectrics.
Revealing the light-matter interaction of molybdenum disulfide (MoS2) and further improving its tunability facilitate the construction of highly integrated optoelectronics in communication and
Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse.
Recently, two-dimensional (2D) van der Waals (vdWs) heterostructures provided excellent and fascinating platforms for advanced engineering in high-performance optoelectronic devices. Herein, novel


Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor.
The observation of the NPC in the ReS2/h-BN/MoS2 vdW heterostructure-based floating gate phototransistor shows that control of NPC through light intensity is promising in realization of light-tunable multibit memory devices.
Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating.
A gradual and reversible switching between NPC and PPC is achieved in a van der Waals heterostructure of graphene and MoTe2 in which the initially observed NPC state becomes a PPC state with the increase in light intensity.
Multifunctional Photodetectors Based on Nanolayered Black Phosphorus/SnS0.5Se1.5 Heterostructures
van der Waals (vdW) heterostructures have recently emerged as promising artificial structures to create new functionalities for nano-and optoelectronic applications. In this work, we successfully
Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices.
Graphene-on-MoS2 binary heterostructures display remarkable dual optoelectronic functionality, including highly sensitive photodetection and gate-tunable persistent photoconductivity, and may lead to new graphene-based optoeLECTronic devices that are naturally scalable for large-area applications at room temperature.
Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction.
In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed and exhibited an excellent performance, namely, a high photoresponsivity, specific detectivity of 5×1011 Jones, and response time of 17 ms.
Positive and negative photoconductivity characteristics in CsPbBr3/graphene heterojunction
This work fabricated CsPbBr3 nanocrystals (NCs)-multilayered graphene heterojunction, which achieved persistent NPC response to ultra violet (300-390 nm) and PPC response to visible light (420-510 nm).
Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode
The electrical as well as optical properties of single-layer and multi-layer MoS2-based phototransistors are investigated and improved optical properties are demonstrated through the use of see-through metal electrode instead of the traditional global bottom gate or patterned local bottom gate structures.
Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment
Highly efficient near‐infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS2 and ReSe2 is demonstrated and offers a novel device platform for achieving high‐performance IR photodETectors.
Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes
It is demonstrated that an atomically thin and sharp heterojunction p–n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2), showing distinct layer-number dependent emission characteristics and revealing important insight about the origin of hot-electron luminescence and the nature of electron–orbital interaction in TMDs.