Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration

@article{Skordas2012WaferscaleOF,
  title={Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration},
  author={Spyridon Skordas and Douglas C. La Tulipe and Kevin Winstel and Tuan Anh Vo and Deepika Priyadarshini and Allan Upham and D. Song and Alun Hubbard and Ryan C. Johnson and Kris Cauffman and Sivananda K. Kanakasabapathy and Wun-Ji Lin and Seth L. Knupp and Matthieu Malley and Mukta G. Farooq and Robert E. Hannon and Daniel F. Berger and Subramanian S. Iyer},
  journal={2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration},
  year={2012},
  pages={203-208}
}
300mm Si wafer-scale oxide fusion bonding and mechanical/wet etch assisted wafer thinning processes were combined with a TSV-last 3D integration strategy to fabricate electrical open/short yield learning on through-wafer electrical TSV test chains. 

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