Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors

@article{Sawayama2010WaferbondedGB,
  title={Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors},
  author={Yoshihiro Sawayama and Yasuo Doi and Ryuji Kurayama and Eiji Higurashi and Mikhail Patrashin and Iwao Hosako},
  journal={35th International Conference on Infrared, Millimeter, and Terahertz Waves},
  year={2010},
  pages={1-2}
}
We report a successful fabrication of a far-infrared blocked-impurity-band (BIB) detector. We achieve a clear boundary interface between an absorption layer and a blocking layer with a transition layer of 8 nm thick by bonding two discrete germanium wafers using surface activated bonding (SAB) technique. As the results, a good responsivity of ∼7 A/W at 2 K has been achieved with extended cutoff wavelength compared to a conventional Ge:Ga photoconductor detector.