Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

@article{Lee2014WaferScaleGO,
  title={Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium},
  author={Jae‐Hyun Lee and Eun Kyung Lee and Won-Jae Joo and Yamujin Jang and Byung-Sung Kim and Jae‐Young Lim and Soon-Hyung Choi and Sung Joon Ahn and Joung Real Ahn and Min Ho Park and Cheol‐Woong Yang and Byoung Lyong Choi and Sung Woo Hwang and Dongmok Whang},
  journal={Science},
  year={2014},
  volume={344},
  pages={286 - 289}
}
Smoothing Graphene Several methods have been reported for the growth of monolayer graphene into areas large enough for integration into silicon electronics. However, the electronic properties of the graphene are often degraded by grain boundaries and wrinkles. Lee et al. (p. 286, published online 3 April) showed that flat, single crystals of monolayer graphene can be grown by chemical-vapor deposition on silicon wafers covered by a germanium layer that aligns the grains. The graphene can be dry… 

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