WIGNER CRYSTALLIZATION AND METAL-INSULATOR TRANSITION OF TWO-DIMENSIONAL HOLES IN GAAS AT B = 0

@article{Yoon1999WIGNERCA,
  title={WIGNER CRYSTALLIZATION AND METAL-INSULATOR TRANSITION OF TWO-DIMENSIONAL HOLES IN GAAS AT B = 0},
  author={J. Yoon and C. Li and D. Shahar and D. Tsui and M. Shayegan},
  journal={Physical Review Letters},
  year={1999},
  volume={82},
  pages={1744-1747}
}
  • J. Yoon, C. Li, +2 authors M. Shayegan
  • Published 1999
  • Materials Science, Physics
  • Physical Review Letters
  • We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at $r_s=35.1\pm0.9$, which… CONTINUE READING
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