W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz

Abstract

We report on the W-band power performance of N-polar GaN MISHEMTs demonstrating a record power-added efficiency (PAE) of 27.8% while maintaining an excellent output power density of 3 W/mm and 7.4 dB peak gain at 94 GHz. To enable this performance, a novel device technology is presented that utilizes the advantages of the inverted polarization of N-polar… (More)

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@article{Romanczyk2016WbandNG, title={W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz}, author={Brian Romanczyk and Melissa Anne Guidry and Soenke Wienecke and Hongqi Li and E. Ahmadi and Xin Zheng and S. Keller and U. K. Mishra}, journal={2016 IEEE International Electron Devices Meeting (IEDM)}, year={2016}, pages={3.5.1-3.5.4} }