W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design

Abstract

In this paper we report on the development of W-band MMIC power amplifiers using 0.1 /spl mu/m AlInAs-GaInAs-InP HEMT technology and finite-ground coplanar waveguide (FGCPW) designs. Two single-stage single-ended W-band MMICs using 150 /spl mu/m and 250 /spl mu/m wide HEMTs were designed, fabricated and tested. The results show that the small signal… (More)

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@article{Yu1998WbandIH, title={W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design}, author={M. Yu and Mehran Matloubian and Peter Petre and L. Hamilton and R. L. Bowen and M. Lui and H. C. Sun and Catherine Ngo and P. Janke}, journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)}, year={1998}, pages={37-40} }