W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

@article{Romanczyk2020WBandPP,
  title={W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs},
  author={Brian Romanczyk and Umesh K. Mishra and Xun Zheng and Matthew Guidry and Haoran Li and Nirupam Hatui and Christian Wurm and Athith Krishna and Elaheh Ahmadi and Stacia Keller},
  journal={IEEE Electron Device Letters},
  year={2020},
  volume={41},
  pages={349-352}
}
This letter reports on the improvement of the large-signal W-band power performance of nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition of a 40-nm-thick ex-situ silicon nitride passivation layer deposited by plasma enhanced chemical vapor deposition. The additional passivation improves the dispersion control allowing the device to be operated at higher voltages. Continuous-wave load pull measurements performed at 94 GHz on a $2\times 37.5\,\,\mu… Expand

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References

SHOWING 1-10 OF 29 REFERENCES
N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz
W-band power performance is reported on an N-polar GaN HEMT for the first time, resulting in a record output power density for any GaN device on a sapphire substrate. This result is achieved using anExpand
W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology
A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. Electron-beam lithography has been employed to define a 100-nm T-shaped gate on the AlGaN/GaNExpand
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
This paper reports on state-of-the-art millimeter-wave power performance of N-polar GaN-based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz. The performance isExpand
W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE
We report our second-generation mm-wave GaN double-heterostructure FET (DHFET) device technology which uses MBE regrowth of n+ ohmic regions to reduce parasitic resistance, and an improved T-gateExpand
94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts
We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power densityExpand
Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz
A novel device technology has been developed to enable the fabrication of high performance mm-wave GaN high electron mobility transistors (HEMTs) for solid-state power amplifiers operating in W-band.Expand
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
A novel N-Polar GaN cap (MIS)high electron mobility transistor demonstrating record 6.7-W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is presented. ThisExpand
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz
We report on the W-band power performance of N-polar GaN MISHEMTs demonstrating a record power-added efficiency (PAE) of 27.8% while maintaining an excellent output power density of 3 W/mm and 7.4 dBExpand
0.1-μm Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
High-performance 0.1-μm InAlN/GaN high electron-mobility transistors (HEMTs) have been successfully developed for power amplifiers operating at E-band (targeting 71–76 and 81–86-GHz bands). HighExpand
First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented inExpand
...
1
2
3
...