W-Band GaN MMIC with 842 mW output power at 88 GHz

@article{Micovic2010WBandGM,
  title={W-Band GaN MMIC with 842 mW output power at 88 GHz},
  author={Miro Micovic and Ara Kurdoghlian and Keisuke Shinohara and Shawn D. Burnham and Ivan Milosavljevic and Ming Hu and Andrea Corrion and Andy K. Fung and Robert H.-J. Lin and Lorene A. Samoska and Pekka Kangaslahti and B. Lambrigtsen and Paul F. Goldsmith and W. S. Wong and Adele E. Schmitz and Paul Hashimoto and P. J. Willadsen and D. Chow},
  journal={2010 IEEE MTT-S International Microwave Symposium},
  year={2010},
  pages={237-239}
}
We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology[1], the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 µm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14… CONTINUE READING
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