Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques

@article{Cai2017VulnerabilitiesIM,
  title={Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques},
  author={Yu Cai and Saugata Ghose and Yixin Luo and Ken Mai and Onur Mutlu and Erich F. Haratsch},
  journal={2017 IEEE International Symposium on High Performance Computer Architecture (HPCA)},
  year={2017},
  pages={49-60}
}
  • Yu Cai, Saugata Ghose, +3 authors E. Haratsch
  • Published 1 February 2017
  • Computer Science
  • 2017 IEEE International Symposium on High Performance Computer Architecture (HPCA)
Modern NAND flash memory chips provide high density by storing two bits of data in each flash cell, called a multi-level cell (MLC. [...] Key Method In order to reduce the impact of cell-to-cell interference on the reliability of MLC NAND flash memory, flash manufacturers adopt a two-step programming method, which programs the MLC in two separate steps. First, the flash memory partially programs the least significant bit of the MLC to some intermediate threshold voltage. Second, it programs the most…Expand
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