Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques

@article{Cai2017VulnerabilitiesIM,
  title={Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques},
  author={Yu Cai and Saugata Ghose and Yixin Luo and Ken Mai and Onur Mutlu and Erich F. Haratsch},
  journal={2017 IEEE International Symposium on High Performance Computer Architecture (HPCA)},
  year={2017},
  pages={49-60}
}
Modern NAND flash memory chips provide high density by storing two bits of data in each flash cell, called a multi-level cell (MLC). An MLC partitions the threshold voltage range of a flash cell into four voltage states. When a flash cell is programmed, a high voltage is applied to the cell. Due to parasitic capacitance coupling between flash cells that are physically close to each other, flash cell programming can lead to cell-to-cell program interference, which introduces errors into… CONTINUE READING

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  • Building on our experimental observations, we propose several new mechanisms for MLC NAND flash memory that eliminate or mitigate data corruption in partially-programmed cells, thereby removing or reducing the extent of the vulnerabilities, and at the same time increasing flash memory lifetime by 16%.

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