Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

@article{Lee2006VthVA,
  title={Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node},
  author={S.-h. Lee and Jeff Huang and P. Majhi and P. D. Kirsch and B. Min and C.-S. Park and J. Oh and W. Loh and C.-Y. Kang and B. Sassman and P. R. A. Binetti Y.-J. Hung and Steve McCoy and Jie Chen and Benny Wu and G. Moori and Dawei Heh and Chadwin D. Young and Gennadi Bersuker and H. Tseng and S. K. Banerjee and Raj Jammy},
  journal={2009 Symposium on VLSI Technology},
  year={2006},
  pages={74-75}
}
We have studied key parameters for controlling threshold voltage (Vth) variation and strain maintenance of gate first SiGe channel pMOSFETs. By overcoming 1) Ge diffusion and 2) strain relaxation during source/drain activation, we for the first time demonstrate high Ge% (50%) SiGe channel with millisecond flash anneal. Optimizing the thermal budget with millisecond anneal keeps the Vth variation same to Si unlike RTA anneal while still having 2.8times mobility gain. We achieved high performance… CONTINUE READING

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