Visualization of GaN surface potential using terahertz emission enhanced by local defects

@inproceedings{Sakai2015VisualizationOG,
  title={Visualization of GaN surface potential using terahertz emission enhanced by local defects},
  author={Yuji Sakai and Iwao Kawayama and Hidetoshi Nakanishi and Masayoshi Tonouchi},
  booktitle={Scientific reports},
  year={2015}
}
Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the interface, should be revealed. Here, we report visualization of terahertz (THz) emission from the surface of GaN, which is excited by ultraviolet femtosecond laser pulses. We found that the THz emission… CONTINUE READING
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The authors declare no competing financial interests

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