Visible blind p+/p/n-/n+ UV 4H-SiC photodiodes based on 4H-SiC homoepilayers

@article{Liu2006VisibleBP,
  title={Visible blind p+/p/n-/n+ UV 4H-SiC photodiodes based on 4H-SiC homoepilayers},
  author={Xingfang Liu and Jinmin Li and Guosheng Sun and Jin Ning and Yongmei Zhao and Jiaye Li and Muchang Luo and Yiping Zeng},
  journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings},
  year={2006},
  pages={866-868}
}
The p<sup>+</sup>/p<sup>-</sup>/n<sup>-</sup>/n<sup>+</sup> structure ultraviolet 4H-SiC photodiodes with different sizes of active areas have been fabricated and characterized by the I-V characteristics and photoresponse spectra. The statistical leakage current was around 10 <sup>-11</sup>nA at zero bias and it was less than 10<sup>-9</sup> A at -5 V obtained from the 100 times 100 mum<sup>2</sup> size samples. The photoresponse spectra, measured at different biases, showed high detectivity at… CONTINUE READING

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