• DOI:10.1088/1361-6528/28/4/045201
• Corpus ID: 30162183

Very thin ITO/metal mesh hybrid films for a high-performance transparent conductive layer in GaN-based light-emitting diodes.

@article{Min2017VeryTI,
  title={Very thin ITO/metal mesh hybrid films for a high-performance transparent conductive layer in GaN-based light-emitting diodes.},
  author={Jung‐Hong Min and Hoe-Min Kwak and Kiyoung Kim and Woo-Lim Jeong and Dong‐Seon Lee},
  journal={Nanotechnology},
  year={2017},
  volume={28 4},
  pages={
          045201
        }
}

• Jung‐Hong Min, Hoe-Min Kwak, +2 authors Dong‐Seon Lee
• Published 27 January 2017
• Materials Science
• Nanotechnology

In this paper, we introduce very thin Indium tin oxide (ITO) layers (5, 10, and 15 nm) hybridized with a metal mesh to produce high-performance transparent conductive layers (TCLs) in near-ultraviolet light-emitting diodes (NUV LEDs). Using UV-vis-IR spectrometry, Hall measurement, and atomic force microscopy, we found that 10 nm was the optimal thickness for the very thin ITO layers in terms of outstanding transmittance and sheet resistance values as well as stable contact properties when hybridized with the metal mesh. The proposed layers showed a value of 4.56 Ω/□ for sheet resistance and a value of 89.1% for transmittance. Moreover, the NUV LEDs fabricated with the hybrid TCLs achieved ∼140% enhanced light output power compared to that of 150 nm thick ITO layers. Finally, to verify the practical usage of the TCLs for industrial applications, we packaged the NUV LED chips and obtained improved turn-on voltage (3.48 V) and light output power (∼116%) performance.