Very-shallow low-resistivity p+-n junctions for CMOS technology

Shallow p-n junctions 110 nm deep have been fabricated using rapid thermal diffusion from a spin-on oxide source. Surface concentrations greater than 3 × 10<sup>20</sup>cm<sup>-3</sup>are possible, with sheet resistivities less than 100 Ω/sq and a maximum reverse-bias leakage at 5 V of 3 nA.cm<sup>-2</sup>. Results from 150-nm junctions are also given and… (More)