Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

@article{King1999VeryLC,
  title={Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process},
  author={C. King and M. Frei and Marco Mastrapasqua and K M Ng and Y. O. Kim and R. Wayne Johnson and S. Moinian and Stefan F Martin and H Cong and F. P. Klemens and T S Jeffrey Hsu and Thomas M Campbell and S. Molloy and L. Fritzinger and T. Ivanov and K. K. Bourdelle and C. C. Lee and Y.-F. Chyan and M R Carroll and C. Leung},
  journal={International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)},
  year={1999},
  pages={565-568}
}
We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with f/sub T/ of 52 GHz and f/sub max/ of 70 GHz with the addition of only 4 lithography levels over our 0.25 /spl mu/m CMOS technology without any… CONTINUE READING