Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors

@inproceedings{Ishii2002VeryhighspeedSI,
  title={Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors},
  author={Kiyoshi Ishii and Koichi Murata and Minoru Ida and Kenji Kurishima and Takatomo Enoki and Tomohiro Shibata and Eiichi Sano},
  year={2002}
}
A selector integrated circuit (IC) as a benchmark to assess the performances of new undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been designed and fabricated. Operation of the selector gate at 86 Gbit/s has been achieved using an HBT developed by the authors, which exhibits the fT  of 140 GHz and fmax of 200 GHz at a collector current density of 50 kA/cm2. This indicates that InP/InGaAs HBTs have excellent speed performance for making ultra-high-speed ICs with data… CONTINUE READING

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