Very-high-bandwidth In/sub 0.53/Ga/sub 0.47/As p-i-n detector arrays

@article{Lui1991VeryhighbandwidthI0,
  title={Very-high-bandwidth In/sub 0.53/Ga/sub 0.47/As p-i-n detector arrays},
  author={Y Y Lui and S. R. Forrest and G. Tangonan and R. A. Jullens and R. Y. Loo and V. L. Jones and D. Persechini and J. Pikulski and M Johnson},
  journal={IEEE Photonics Technology Letters},
  year={1991},
  volume={3},
  pages={931-933}
}
The authors fabricated and packaged 1*4 arrays of In/sub 0.53/Ga/sub 0.47/As p-i-n photodetectors connected in a GaAs FET bias-switched, common cathode circuit. The bandwidth of the discrete (packaged) photodiodes in the arrays exceeds 11 GHz, and is 5 GHz for the packaged arrays. The on/off isolation ratio for fully packaged arrays using GaAs FET bias… CONTINUE READING