Very-high-bandwidth In/sub 0.53/Ga/sub 0.47/As p-i-n detector arrays

  title={Very-high-bandwidth In/sub 0.53/Ga/sub 0.47/As p-i-n detector arrays},
  author={Y Y Lui and S. R. Forrest and G. Tangonan and R. A. Jullens and R. Y. Loo and V. L. Jones and D. Persechini and J. Pikulski and M Johnson},
  journal={IEEE Photonics Technology Letters},
The authors fabricated and packaged 1*4 arrays of In/sub 0.53/Ga/sub 0.47/As p-i-n photodetectors connected in a GaAs FET bias-switched, common cathode circuit. The bandwidth of the discrete (packaged) photodiodes in the arrays exceeds 11 GHz, and is 5 GHz for the packaged arrays. The on/off isolation ratio for fully packaged arrays using GaAs FET bias… CONTINUE READING