Very-fast transmission line pulsing of integrated structures and the charged device model

@article{Gieser1996VeryfastTL,
  title={Very-fast transmission line pulsing of integrated structures and the charged device model},
  author={Gieser and Haunschild},
  journal={1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium},
  year={1996},
  pages={85-94}
}
Transmission line pulsing (TLP) is well-established for the IV-characterization of ESD-protection elements. There still is a significant gap between the performance of present TLP-systems and the demands of the Charged Device Model (CDM). A very-fast, narrow-pulse (>3.5 ns), high-current TLP (VF-TLP) is designed to reduce this gap. It is feasible to study the pulsed breakdown of gate oxides and to determine at least the quasi-static IV-characteristics of input structures. Gate oxide breakdown… CONTINUE READING

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