Vertically Integrated Multiple Nanowire Field Effect Transistor.

@article{Lee2015VerticallyIM,
  title={Vertically Integrated Multiple Nanowire Field Effect Transistor.},
  author={Byung-Hyun Lee and Min-Ho 媛뺣 Kang and Dae-Chul Ahn and Jun-Young Park and Tewook Bang and Seung-Bae Jeon and Jae Hur and Dongil Lee and Yang-Kyu Choi},
  journal={Nano letters},
  year={2015},
  volume={15 12},
  pages={
          8056-61
        }
}
A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple… CONTINUE READING
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