Vertical tunnel field-effect transistor with bandgap modulation and workfunction engineering

@article{Bhuwalka2004VerticalTF,
  title={Vertical tunnel field-effect transistor with bandgap modulation and workfunction engineering},
  author={K. K. Bhuwalka and J{\"o}rg Schulze and Ignaz Eisele},
  journal={Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)},
  year={2004},
  pages={241-244}
}
A MBE grown vertical tunnel FET, based on band-to-band tunneling, has already been proposed. Based on Si, it showed some remarkable properties. However, it failed to meet the technology requirements in terms of on-current and threshold voltage. Improvement in the n-channel device performance by bandgap modulation at the tunneling junction using a thin /spl delta/p/sup +/ SiGe layer has been shown. However, as the germanium mole fraction is increased in SiGe, even though the on-current threshold… CONTINUE READING
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