Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2 X 4 (X = N, P, As and Sb)

@article{Touski2021VerticalSM,
  title={Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2 X 4 (X = N, P, As and Sb)},
  author={Shoeib Babaee Touski and Nayereh Ghobadi},
  journal={Journal of Physics D: Applied Physics},
  year={2021},
  volume={54}
}
In this work, the electrical and spin properties of monolayer MoSi2 X 4 (X = N, P, As, and Sb) under vertical strain are investigated. The band structures show that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct semiconductors. The vertical strain has been selected to modify the electrical properties. The bandgap shows a maximum and decreases for both tensile and compressive strains. The valence band at K-point displays a large spin-splitting, whereas the conduction… Expand