Vertical high-mobility wrap-gated InAs nanowire transistor

@article{Bryllert2005VerticalHW,
  title={Vertical high-mobility wrap-gated InAs nanowire transistor},
  author={Tomas Bryllert and L. E. Wernersson and L. Froberg and Lars Samuelson},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={27},
  pages={323-325}
}
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 /spl times/ 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V/sub ds/=0.15 V (V/sub g/=0 V), and a high mobility, compared to the previous nanowire transistors, is deduced. 
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