Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

@article{Chanthbouala2011VerticalcurrentinducedDM,
  title={Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities},
  author={A. Chanthbouala and R. Matsumoto and J. Grollier and V. Cros and A. Anane and A. Fert and A. Khvalkovskiy and K. A. Zvezdin and K. Nishimura and Y. Nagamine and H. Maehara and K. Tsunekawa and A. Fukushima and S. Yuasa},
  journal={Nature Physics},
  year={2011},
  volume={7},
  pages={626-630}
}
In the past few years, there have been a number of proposals for fabricating magnetic memories based on the current-induced motion of magnetic domain walls. A device that uses a novel geometry for injecting electrical currents into the sample is shown to work with current densities that are two orders of magnitude lower than in previous approaches. 

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