Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

@article{Chanthbouala2011VerticalcurrentinducedDM,
  title={Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities},
  author={Andre Chanthbouala and Rie Matsumoto and Julie Grollier and Vicent Cros and Abdelmadjid Anane and Albert Fert and Alexey Khvalkovskiy and K. A. Zvezdin and Kazumasa Nishimura and Yoshinori Nagamine and Hiroki Maehara and Koji Tsunekawa and Akio Fukushima and Shinji Yuasa},
  journal={Nature Physics},
  year={2011},
  volume={7},
  pages={626-630}
}
In the past few years, there have been a number of proposals for fabricating magnetic memories based on the current-induced motion of magnetic domain walls. A device that uses a novel geometry for injecting electrical currents into the sample is shown to work with current densities that are two orders of magnitude lower than in previous approaches. 
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