Vertical-Slit Field-Effect Transistor (VeSFET) - design space exploration and DC model

@article{Pfitzner2011VerticalSlitFT,
  title={Vertical-Slit Field-Effect Transistor (VeSFET) - design space exploration and DC model},
  author={Andrzej Pfitzner},
  journal={Proceedings of the 18th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2011},
  year={2011},
  pages={151-156}
}
  • Andrzej Pfitzner
  • Published 2011 in
    Proceedings of the 18th International Conference…
This paper presents an in-depth discussion of the Vertical-Slit Field-Effect Transistor's (VeSFET's) operation. The junction-less twin gate VeSFET is the basic component of a new 3D VeSTIC technology proposed by Maly [1]. Our numerical TCAD simulations confirm the attractive properties of VeSFETs, such as high Ion to Ioff ratio, low leakage currents, and effective current control by independently biased symmetric gates. These simulations serve as a backbone for an analytical approximation of… CONTINUE READING
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Integrated Circuit, Device, System, and Method of Fabrication

  • W. Maly
  • Patent Application WO 2007/133775
  • 2007
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