Vertical SiGe Epitaxial Growth System

Abstract

OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC… (More)

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Cite this paper

@inproceedings{Inokuchi2002VerticalSE, title={Vertical SiGe Epitaxial Growth System}, author={Y. Inokuchi and Akihiro Miyauchi}, year={2002} }