Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

@article{Egard2010VerticalIN,
  title={Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.},
  author={Mikael Egard and Sofia Johansson and A-C Johansson and K-M Persson and Anil W. Dey and B. M. Borg and Claes Thelander and L. Wernersson and Erik Lind},
  journal={Nano letters},
  year={2010},
  volume={10 3},
  pages={809-12}
}
In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed… CONTINUE READING

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