Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers

@article{Kobayashi2016VersatileTN,
  title={Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers},
  author={Atsuro Kobayashi and Tsukasa Tokutomi and Ken Takeuchi},
  journal={2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)},
  year={2016},
  pages={1-2}
}
Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times. 

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