Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays

Abstract

We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>;3×10<sup>7</sup>A/cm<sup>2</sup>) and high selectivity (~10<sup>4</sup>). The non-linear I-V characteristics can be explained by… (More)

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