Variation of lateral doping as a field terminator for high-voltage power devices


In this brief a new concept for high-voltage planar junctions is presented. The necessary widening of the space-charge region at the junction surface is obtained by implantation through small openings in the oxide mask and subsequent drive-in, leading to a controlled smeared-out dopant distribution. Compared to other planar junctions, this concept also… (More)


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Citations per Year

Citation Velocity: 5

Averaging 5 citations per year over the last 3 years.

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