Variable inductance multilayer inductor with MOSFET switch control

@article{Park2004VariableIM,
  title={Variable inductance multilayer inductor with MOSFET switch control},
  author={Piljae Park and Cheon Soo Kim and Mun Yang Park and Sung Do Kim and Hyun Kyu Yu},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={144-146}
}
A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 /spl mu/m, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact… CONTINUE READING
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