Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs

@article{Mazurier2014VariabilityOP,
  title={Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs},
  author={J. Mazurier and Olivier Weber and François Andrieu and Cyrille Le Royer and Olivier Faynot and Maud Vinet},
  journal={2014 IEEE International Conference on IC Design & Technology},
  year={2014},
  pages={1-4}
}
We show that planar Fully Depleted Silicon-On-Insulator (FDSOI) technology allows improving the threshold voltage V<sub>T</sub> variability of CMOS devices in comparison to standard bulk CMOS devices. Moreover, integrated on Ultra-Thin Body and Buried oxide (UTBB), it enables the use of standard power management techniques (Reverse or Forward Back Biasing… CONTINUE READING