Corpus ID: 236318504

Variability of electron and hole spin qubits due to interface roughness and charge traps

@inproceedings{Martnez2021VariabilityOE,
  title={Variability of electron and hole spin qubits due to interface roughness and charge traps},
  author={Biel Mart{\'i}nez and Yann-Michel Niquet},
  year={2021}
}
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability… Expand

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  • Journal of Applied Physics
  • 2011
The static bias on the left and right gates is set to V l = Vr = −75 meV in order not to impede the motion of the dot by a stiff confinement along x
    The valence band edge energy is set to Ev = 0 eV in hole qubits; likewise, the conduction edge energy is set to Ec = 0 eV in electron qubits
      This "electrostatic" argument assumes that these materials are not themselves sources of additional static or dynamic noise
        We emphasize that ν(r ) decays typically faster than 1/|r | due to the presence of metal gates in the device
          We have actually removed from the statistics ≈ 3% strong outliers with Rabi frequencies greater thanfR(0.75) + 4IQR(fR)