Corpus ID: 236318504

Variability of electron and hole spin qubits due to interface roughness and charge traps

  title={Variability of electron and hole spin qubits due to interface roughness and charge traps},
  author={Biel Mart{\'i}nez and Yann-Michel Niquet},
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability… Expand


Spin-Orbit Coupling in Two-Dimensional Electron and Hole Systems
In quasi two-dimensional electron and hole systems spin-orbit (SO) coupling strongly influences both the orbital and spin components of motion. In inversion asymmetric systems SO coupling causes aExpand
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A spin qubit in a fin field-effect transistor
Quantum computing’s greatest challenge is scaling up. Several decades ago, classical computers faced the same problem and a single solution emerged: very-large-scale integration using silicon.Expand
Afanas'ev, and A. Stesmans
  • Journal of Applied Physics
  • 2011
The static bias on the left and right gates is set to V l = Vr = −75 meV in order not to impede the motion of the dot by a stiff confinement along x
    The valence band edge energy is set to Ev = 0 eV in hole qubits; likewise, the conduction edge energy is set to Ec = 0 eV in electron qubits
      This "electrostatic" argument assumes that these materials are not themselves sources of additional static or dynamic noise
        We emphasize that ν(r ) decays typically faster than 1/|r | due to the presence of metal gates in the device
          We have actually removed from the statistics ≈ 3% strong outliers with Rabi frequencies greater thanfR(0.75) + 4IQR(fR)