Variability and failure of set process in HfO2 RRAM

@article{Balatti2013VariabilityAF,
  title={Variability and failure of set process in HfO2 RRAM},
  author={Simone Balatti and Stefano Ambrogio and Daniele Ielmini and D. C. Gilmer},
  journal={2013 5th IEEE International Memory Workshop},
  year={2013},
  pages={38-41}
}
Resistive-switching memory (RRAM) may provide a scalable, low-power alternative to Flash memories for sub-10 nm technology nodes. Due to the atomic-size conductive filament (CF), however, switching variability due to few-defect migration is becoming one of the main concerns for RRAM scaling. This work addresses set-state variability in HfOx RRAM. Our study… CONTINUE READING