Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications

Abstract

This paper investigates the impact of intrinsic random variability on the robustness of sense amplifier (SA) for fin-shaped field-effect transistor (FinFET) subthreshold static random access memory (SRAM) applications. We employ a model-assisted statistical approach to consider both fin line edge roughness (fin LER) and work function variation, which are… (More)
DOI: 10.1109/TCSII.2012.2231016

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