Vapor-liquid-solid growth of endotaxial semiconductor nanowires.

  title={Vapor-liquid-solid growth of endotaxial semiconductor nanowires.},
  author={Shaozhou Li and Xiao Bo Huang and Qing Liu and Xiehong Cao and Fengwei Huo and Hua Zhang and Chee Lip Gan},
  journal={Nano letters},
  volume={12 11},
Free-standing and in-plane lateral nanowires (NWs) grown by the vapor-liquid-solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in silicon substrates by tuning the directional movement of the catalyst in the substrates. The location of the SiGe NWs can be controlled by the SiO(2) pattern on the silicon surface. By varying the… CONTINUE READING

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Interfaces in Materials-Atomic Structure, Thermodynamics and Kinetics of Solid-Vapor, Solid-Liquid and Solid-Solid Interfaces

  • J. M. Howe
  • John Wiley & Sons, Inc.: Singapore,
  • 1997

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