Vapor‐Deposited Single‐Crystal Germanium

@inproceedings{Ruth1960VaporDepositedSG,
  title={Vapor‐Deposited Single‐Crystal Germanium},
  author={Ralph Powers Ruth and John C. Marinace and William Crawford Dunlap},
  year={1960}
}
Germanium layers have been formed on single‐crystal Ge substrates by the thermal decomposition of GeI2. The single‐crystal nature of the layers has been established by x‐ray and electron diffraction examination and by electrical measurements. The deposition process is described briefly. The crystal growth rate varies with crystal direction, and under certain conditions Ge whiskers appear. The layers as deposited are generally n type; ρ ranges from 1 to 5 ohm‐cm and μH from 1200 to 2700 cm2/v… CONTINUE READING

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