Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

@article{Liu2016VanDW,
  title={Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier},
  author={Yuanyue Liu and Paul Stradins and S. H. Wei},
  journal={Science Advances},
  year={2016},
  volume={2}
}
Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success… CONTINUE READING
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