Valley blockade in a silicon double quantum dot

@article{Perron2017ValleyBI,
  title={Valley blockade in a silicon double quantum dot},
  author={J. Perron and M. Gullans and J. Taylor and M. Stewart and Jr. and N. Zimmerman},
  journal={Physical Review B},
  year={2017},
  volume={96},
  pages={205302}
}
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of dc transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of… Expand
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