• Corpus ID: 118735545

Valley-based FETs in graphene

  title={Valley-based FETs in graphene},
  author={M.-K. Lee and Ning-Yuan Lue and Y.-C. Chen and C.-K. Wen and G. Y. Wu},
  journal={arXiv: Mesoscale and Nanoscale Physics},
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down), armchair graphene nanoribbons \leftrightarrow ferromagnetic electrodes, graphene quantum wire… 
1 Citations
A scheme to realize the quantum spin-valley Hall effect in monolayer graphene
Abstract Quantum spin Hall effect was first predicted in graphene. However, the weak spin orbit interaction in graphene meant that the search for quantum spin Hall effect in graphene never