Valley- and spin-dependent quantum Hall states in bilayer silicene

  title={Valley- and spin-dependent quantum Hall states in bilayer silicene},
  author={Thi-Nga Do and Godfrey Gumbs and Po Hsin Shih and Danhong Huang and Ming-Fa Lin},
  journal={Physical Review B},
The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its robust dependence on the electronic valley and spin-orbit coupling. With the unique multi-valley electronic structure and the lack of spin degeneracy, the quantization of the Hall conductivity in this system is unlike the conventional sequence as reported for… 

Figures from this paper

Low-energy bands, optical properties, and spin/valley-Hall conductivity of silicene and germanene
In this work, we study systematically low-energy bands, optical absorbance and spin/valley-Hall conductivity of silicene and germanene in the presence of a perpendicular electric field. Our
Atomistic Band-Structure Computation for Investigating Coulomb Dephasing and Impurity Scattering Rates of Electrons in Graphene
In this paper, by introducing a generalized quantum-kinetic model which is coupled self-consistently with Maxwell and Boltzmann transport equations, we elucidate the significance of using input from
Unusual features of nitrogen substitutions in silicene
The quasiparticle properties resulting from charge and spin are clearly identified in nitrogen-substituted silicenes, for which a theoretical framework is successfully developed from first-principles
Stacking-configuration-enriched essential properties of bilayer graphenes and silicenes.
First-principles calculations show that the geometric and electronic properties of silicene-related systems have diversified phenomena, and investigates the stacking-configuration-induced dramatic transformations of essential properties by relative shift in bilayer graphenes and silicenes.
Rich p-type-doping phenomena in boron-substituted silicene systems
The results demonstrate that the charge transfer leads to the non-uniform chemical environment that creates diverse electronic properties in monolayer silicene.
Nanoscale synthesis of ionic analogues of bilayer silicene with high carrier mobility
Design of materials with special properties benefits from establishing deep structural and electronic analogies between emerging and existing materials. The Zintl anion [Al2Si2]2− is both
Engineering plasmon modes and their loss in armchair graphene nanoribbons by selected edge-extended defects
This work provides a unique way to engineer discrete magnetoplasmon-like modes of AGNRs in the absence of magnetic field and finds them to be analogous to magnetoplasmons associated with collective excitations of Landau-quantized electrons.


Diverse Magnetic Quantization in Bilayer Silicene
The generalized tight-binding model is developed to investigate the rich and unique electronic properties of AB-bt (bottom-top) bilayer silicene under uniform perpendicular electric and magnetic
Quantum Hall effect in ABA- and ABC-stacked trilayer graphene
We numerically study the quantum Hall effect (QHE) in trilayer graphene with different stacking orders in the presence of interlayer bias under a strong magnetic field and disorder. In the biased
Quantum Hall effect in twisted bilayer graphene.
The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer, which implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted.
Silicene field-effect transistors operating at room temperature.
A silicene field-effect transistor is reported, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1)‬s(-1), attributed to acoustic phonon-limited transport and grain boundary scattering.
Landau levels and magneto-transport property of monolayer phosphorene
It is found that the Landau levels and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective k·p Hamiltonian and tight-binding model linearly depend both on the LL index n and magnetic field B, which is similar with that of conventional semiconductor two-dimensional electron gas.
Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene.
The integration of intrinsic magnetism and spontaneous band gap opening makes bilayer silicene and germanene attractive for future nanoelectronics as well as spin-based computation and data storage.
d+id' chiral superconductivity in bilayer silicene.
The structure and physical properties of the undoped bilayer silicene are investigated through first-principles calculations and find the system is intrinsically metallic with sizable pocket Fermi surfaces and enables a high superconducting critical temperature.
Free-Standing Bilayer Silicene: The Effect of Stacking Order on the Structural, Electronic, and Transport Properties
We theoretically investigate the structural, electronic, and transport properties of bilayer silicene. Due to the large numbers of degrees of freedom permitted by the buckled structure of the
Integer quantum Hall effect in a lattice model revisited: Kubo formalism
We investigate numerically the integer quantum Hall effect (IQHE) in a two-dimensional square lattice with non-interacting electrons in presence of disorder and subjected to uniform magnetic field in