• Corpus ID: 119016416

Vacuum Quality Monitoring of Analytical Sputter Depth Profile Equipment by Recontamination Measurements of a Sputtered Ti Surface

@article{Scheithauer2017VacuumQM,
  title={Vacuum Quality Monitoring of Analytical Sputter Depth Profile Equipment by Recontamination Measurements of a Sputtered Ti Surface},
  author={Uwe Scheithauer},
  journal={arXiv: Instrumentation and Detectors},
  year={2017}
}
  • U. Scheithauer
  • Published 1 January 2017
  • Physics
  • arXiv: Instrumentation and Detectors
Often a surface sensitive analytical technique in combination with sample erosion by inert ion sputtering is used for compositional in-depth analysis of solid state samples. Layer by layer the sample gets eroded and then the composition of the actual surface is estimated. The elemental detection limits can be increased by spending more time for the measurement in each sputter depth of the profile measurement. But during this time a significant sample surface recontamination with the element… 
The Benefit of Wide Energy Range Spectrum Acquisition During Sputter Depth Profile Measurements
Thin film systems are often analysed by using sputter depth profiling. First the sample gets eroded by inert gas ion impact during sputter depth profiling. Then the elemental composition of the
Analysis of a Sputtered Si Surface for Ar Sputter Gas Supply Purity Monitoring
For sputter depth profiling often sample erosion by Ar+ ions is used. Only a high purity of the sputter gas and a low contamination level of the ion gun avoids misleading depth profile measurements
Status monitoring of ion sputter relevant parameters of an XPS depth profiling instrument
An X‐ray photoelectron spectroscopy (XPS) instrument is utilized for sputter depth profiling of thin films. Relevant instrumental parameters are the ion gun sputter rate, the contamination level of

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