Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam

@article{Uedono2016VacancytypeDI,
  title={Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam},
  author={Akira Uedono and Shinya Takashima and Masaharu Edo and Katsunori Ueno and Hideaki Matsuyama and Hiroshi Kudo and Hiroshi Naramoto and Shoji Ishibashi},
  journal={2016 16th International Workshop on Junction Technology (IWJT)},
  year={2016},
  pages={35-38}
}
Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction of sample temperature or conductivity. Using this technique, we studied defects introduced by Mg-implantation in GaN. Mg ions of multiple energies (15-180 keV) were implanted to provide a 200-nm-deep box profile with Mg concentration of 4×10<sup>19</sup> cm<sup>-3</sup>. The major defect species of vacancies… CONTINUE READING

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Materials Science Forum

  • S. Ishibashi
  • 2004

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