VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide

@article{Cheng1984VIA5ES,
  title={VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide},
  author={C. Cheng and B. Lalevic and A Liao and T. Chang and E A Caridi and L. A. Coldren},
  journal={IEEE Transactions on Electron Devices},
  year={1984},
  volume={31},
  pages={1985-1985}
}